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CDBQR0230R Datasheet(PDF) 1 Page - Comchip Technology

Part # CDBQR0230R
Description  SMD Schottky Barrier Diode
PDF  4 Pages
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Manufacturer  COMCHIP [Comchip Technology]
Direct Link  http://www.comchiptech.com
Logo COMCHIP - Comchip Technology

CDBQR0230R Datasheet(HTML) 1 Page - Comchip Technology

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Io = 200 mA
VR = 30 Volts
CDBQR0230R
SMD Schottky Barrier Diode
Page 1
QW-A1117
REV:C
SMD Diodes Specialist
A
mA
V
V
1
200
30
35
IO
VR
VRRM
IFSM
8.3ms single half sine-wave superimposed
on rate load(JEDEC method)
OC
OC
+125
+125
-40
TSTG
Tj
Storage temperature
Junction temperature
Average forward current
Reverse voltage
Repetitive peak reverse voltage
Forward current,surge peak
Parameter
Conditions
Symbol Min Typ Max Unit
uA
V
1
0.6
IR
VF
Reverse current
Forward voltage
Parameter
Conditions
Symbol Min Typ Max Unit
VR = 10 V
IF = 200 mA
O
Maximum Rating (at TA=25 C unless otherwise noted)
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
Features
Low reverse current.
Designed for mounting on small surface.
Extremely thin / leadless package.
Majority carrier conduction.
Mechanical data
Case: 0402(1005) standard package,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Marking code: cathode band & BB
Mounting position: Any.
Weight: 0.001 gram(approx.).
Comchip Technology CO., LTD.
(RoHS Device)
mW
125
PD
Power Dissipation
0.041(1.05)
0.037(0.95)
0.026(0.65)
0.022(0.55)
0402(1005)
Dimensions in inches and (millimeter)
0.020(0.50) Typ.
0.022(0.55)
0.018(0.45)
0.012(0.30) Typ.


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