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CDBQR42 Datasheet(PDF) 1 Page - Comchip Technology |
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CDBQR42 Datasheet(HTML) 1 Page - Comchip Technology |
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1 / 4 page  Symbol Typ Parameter Conditions Min Max Unit Forward voltage CDBQR42/43 CDBQR42 CDBQR43 CDBQR42 CDBQR43 IF = 10mA IF = 200mA IF = 50mA IF = 2mA IF = 15mA VF V 0.4 1 0.65 0.33 0.45 Reverse current Capacitance between terminals Reverse recovery time VR = 25V f = 1 MHz, and 1 VDC reverse voltage IF=IR=10mA,Irr=0.1xIR,RL=100 ohm IR CT Trr uA pF nS 5 10 0.5 Io = 200 mA VR = 30 Volts CDBQR42/43 SMD Schottky Barrier Diode (RoHS Device) QW-A1125 O Maximum Rating (at TA=25 C unless otherwise noted) O Electrical Characteristics (at TA=25 C unless otherwise noted) Page 1 Typ IO IFSM VR(RMS) VR VRM IFRM Repetitive peak forward current Average forward rectified current Reverse voltage Peak reverse voltage Forward current,surge peak Symbol Parameter Conditions Min Max Unit RMS reverse voltage 8.3 ms single half sine-wave superimposed on rate load(JEDEC method) A A mA V V V 4 0.5 200 21 30 30 TSTG Tj Storage temperature Junction temperature OC OC +125 +125 -55 PD Power dissipation Thermal resistance junction to ambient air mW OC/W 125 667 R JA REV:B SMD Diodes Specialist Features Low forward voltage. Designed for mounting on small surface. Extremely thin/leadless package. Majority carrier conduction. Mechanical data Case: 0402(1005) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Marking code: CDBQR42 : BD CDBQR43 : BE Mounting position: Any Weight: 0.001 gram(approx.). Comchip Technology CO., LTD. 0.041(1.05) 0.037(0.95) 0.026(0.65) 0.022(0.55) 0402(1005) Dimensions in inches and (millimeter) 0.020(0.50) Typ. 0.022(0.55) 0.018(0.45) 0.012(0.30) Typ. |
Similar Part No. - CDBQR42 |
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Similar Description - CDBQR42 |
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