IXZ4DF18N50 datasheet(2/7 Pages) IXYS

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IXZ4DF18N50

RF Power MOSFET & DRIVER

Device Specifications

Device Performance

Symbol

Test Condition

Minimum

Typical

Maximum

Rds(ON)

VCC = 15 V, ID = 0.5IDM25

Pulse Test, t ≤ 300 S, Duty Cycle ≤ 2%

0.29

VCC, VCCIN

15V

20V

IN (Signal Input)

- 5V

VCCIN+0.3V

VIH (High Input Voltage)

VCCIN -2V

VCCIN+0.3V

VIL (Low Input Voltage)

0.8V

ZIN

f = 1MHz

7960

Cstray

f = 1MHz Any one pin to the back plane

metal

46pf

COSS

VGS = 0V, VDS = 0.8VDSS(max) ,

f =1MHz

139pf

tONDLY

TC = 25°C

VCC, VCCIN, VIN = 15V, 1 S Pulse,

VDS = 50V, RL = 5.0

17 nS

tOFFDLY

26 nS

TC = 25°C

VCC, VCCIN, VIN = 15V,1 S Pulse,

VDS = 50V, RL = 5.0

3 nS

Symbol

Maximum

Ratings

fMAX

ID = 0.5IDM25

40MHz

VDSS

500V

VCC, VCCIN

20V

IDSS

VDS = 0.8VDSS

TJ = 25C

50uA

VGS = 0V

TJ = 125C

1mA

IDM25

= 25°C

19A

IDM

TC = 25°C, Pulse limited by TJM

95A

IAR

TC = 25°C

19A

PT (MOSFET and Driver)

= 25°C

500 W

RthJC

0.25 °C/W

RthJHS

TBD °C/W

Test Conditions

Parameter

Value

Maximum Junction Temperature

150°C

Operating Temperature Range

- 40°C to 85°C

Weight

5.5g

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