IXZR18N50 datasheet(2/4 Pages) IXYS

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IXZR18N50 & IXZR18N50A/B

Z-MOS RF Power MOSFET

Characteristic Values

(TJ = 25°C unless otherwise specified)

Symbol

Test Conditions

min.

typ.

max.

VGS = 0 V

ISM

Repetitive; pulse width limited by TJM

114

VSD

IF = Is, VGS=0 V, Pulse test, t ≤ 300 s, duty cycle

≤2%

1.5

Trr

200

Source-Drain Diode

IXYS RF reserves the right to change limits, test conditions and dimensions.

IXYS RF MOSFETS are covered by one or more of the following U.S. patents:

4,835,592

4,860,072

4,881,106

4,891,686

4,931,844

5,017,508

5,034,796

5,049,961

5,063,307

5,187,117

5,237,481

5,486,715

5,381,025

5,640,045

6,404,065

6,583,505

6,710,463

6,727,585

6,731,002

CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device.

Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information pub-

lished in this document at any time and without notice.

Symbol

Test Conditions

Characteristic Values

(TJ = 25°C unless otherwise specified)

min.

typ.

max.

Ω

Ciss

2020

Coss

VGS = 0 V, VDS = 0.8 VDSS(max),

f = 1 MHz

172

Crss

Td(on)

Ton

VGS = 15 V, VDS = 0.8 VDSS

ID = 0.5 IDM

RG = 1 Ω (External)

Td(off)

Toff

Qg(on)

Qgs

VGS = 10 V, VDS = 0.5 VDSS

ID = 0.5 ID25 IG = 3mA

Qgd

Cstray

Back Metal to any Pin

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