BUV23 datasheet(2/2 Pages) COMSET

2 / 2 page

COMSET SEMICONDUCTORS

2/2

NPN BUV23

IEBO

Emitter Cutoff Current

VEB=5.0 V, IC=0

IC=8 A , VCE=4.0 V

hFE

DC Current Gain (1)

IC=16 A , VCE=4.0 V

IC=8 A , IB=1.6 A

-0.2

0.8

VCE(SAT)

Collector-Emitter

saturation Voltage (1)

IC=16 A , IB=3.2 A

-0.35

VBE(SAT)

Base-Emitter saturation

Voltage (1)

IC=16 A , IB=3.2 A

1.15

1.5

Symbol

Ratings

Test Condition(s)

Min Typ Mx Unit

Transition frequency

VCE=15 V , IC=2 A , f=10 MHz

ton

Turn-on time

IC=16 A , IB=3.2 A

0.55

1.3

MHz

Storage time

1.7

2.5

File time

IC=16 A

IB1 = -IB2 =3.2 A

0.26

1.2

µs

(1) Pulse Duration = 300

µs, Duty Cycle <= 2%

MECHANICAL DATA CASE TO-3

DIMENSIONS

inches

25,51

1,004

38,93

1,53

30,12

1,18

17,25

0,68

10,89

0,43

11,62

0,46

8,54

0,34

1,55

0,6

19,47

0,77

0,04

4,06

0,16

Pin 1 :

Base

Pin 2 :

Emitter

Case :

Collector

Information furnished is believed to be accurate and reliable. However, CS assumes no responsability

for the consequences of use of such information nor for errors that could appear.

Data are subject to change without notice.

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