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APT50DF170HJ Datasheet(PDF) 3 Page - Microsemi Corporation |
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APT50DF170HJ Datasheet(HTML) 3 Page - Microsemi Corporation |
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3 / 3 page ![]() APT50DF170HJ www.microsemi.com 3- 3 Typical Performance Curve Energy losses vs Collector Current 0 5 10 15 20 0 2040 6080 100 IF (A) VCE = 900V VGE = - 15V TJ = 125°C maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0 0.2 0.4 0.6 0.8 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Diode Forward Characteristic of diode TJ=25°C TJ=125°C TJ=125°C 0 20 40 60 80 100 00.5 11.5 22.5 3 VF (V) ISOTOP® is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. |
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