ACE2302

N-Channel Enhancement Mode MOSFET

VER 1.2

1 

Description

The ACE2302 is the N-Channel logic enhancement mode power field effect transistors are produced

using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and notebook

computer power management and Battery powered circuits, and low in-line power loss are needed in a

very small outline surface mount package.

Features

DS(ON)

Application

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

20

V

Gate-Source Voltage

±

20

V

3.2

2.6

A

Pulsed Drain Current

10

A

Continuous Source Current (Diode Conduction)

1.6

A

1.25

Power Dissipation

0.8

W

Operating Junction Temperature

150

Storage Temperature Range

Thermal Resistance-Junction to Ambient

100