TR8 datasheet(2/5 Pages) TRSYS

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TR8 SERIES

SILICON TRIACS

† All voltages are with respect to Main Terminal 1.

NOTES: 6. This parameter must be measured using pulse techniques, tp = £ 1 ms, duty cycle £ 2 %. Voltage-sensing contacts separate from

the current carrying contacts are located within 3.2 mm from the device body.

7. The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:

RG = 100 W , tp(g) = 20 m s, tr = £ 15 ns, f = 1 kHz.

VTM

Peak on-state voltage

ITM = ±12 A

IG = 50 mA

(see Note 6)

±1.6

±2.1

Holding current

Vsupply = +12 V†

Vsupply = -12 V†

IG = 0

Init’ ITM = 100 mA

Init’ ITM = -100 mA

-9

-30

Latching current

Vsupply = +12 V†

Vsupply = -12 V†

(see Note 7)

-50

dv/dt

Critical rate of rise of

off-state voltage

VDRM = Rated VDRM

IG = 0

TC = 110°C

±100

V/µs

dv/dt(c)

Critical rise of commu-

tation voltage

VDRM = Rated VDRM

ITRM = ±12 A

TC = 85°C

±5

V/µs

thermal characteristics

PARAMETER

MIN

TYP

MAX

UNIT

Rq JC

Junction to case thermal resistance

1.8

°C/W

Rq JA

Junction to free air thermal resistance

62.5

°C/W

electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

TYPICAL CHARACTERISTICS

Figure 1.

Figure 2.

GATE TRIGGER CURRENT

C - Case Temperature - °C

-60

-40

-20

100

120

0·1

100

1000

CASE TEMPERATURE

AA = ± 12 V

L = 10 WW

p(g) = 20 µs

supply IGTM

GATE TRIGGER VOLTAGE

C - Case Temp er atur e - ° C

-60

-40

-20

100

120

0·1

CASE TEMPERATURE

supply IGTM

AA = ± 12 V

L = 10 WW

p(g) = 20 µs

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