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MCP1790-3002E/EB Datasheet(PDF) 18 Page - Microchip Technology |
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MCP1790-3002E/EB Datasheet(HTML) 18 Page - Microchip Technology |
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18 / 34 page ![]() MCP1790/MCP1791 DS22075A-page 18 © 2008 Microchip Technology Inc. 5.0 APPLICATION CIRCUITS / ISSUES 5.1 Typical Application The MCP1790/MCP1791 is most commonly used as a voltage regulator. It’s high voltage input capability and thermal protection make it ideal for automotive and 24V industrial applications. FIGURE 5-1: Typical Application. 5.1.1 APPLICATION INPUT CONDITIONS 5.2 Power Calculations 5.2.1 POWER DISSIPATION The internal power dissipation of the MCP1790/ MCP1791 is a function of input voltage, output voltage and output current. The power dissipation, as a result of the quiescent current draw, is so low, it is insignifi- cant (70.0 µA x VIN). The following equation can be used to calculate the internal power dissipation of the LDO. EQUATION 5-1: The maximum continuous operating junction temperature specified for the MCP1790/MCP1791 is +125°C. To estimate the internal junction temperature of the MCP1790/MCP1791, the total internal power dissipation is multiplied by the thermal resistance from junction to ambient (R θ JA). The thermal resistance from junction to ambient for the SOT-223-5 package is estimated at 62°C/W. EQUATION 5-2: The maximum power dissipation capability for a package can be calculated given the junction-to- ambient thermal resistance and the maximum ambient temperature for the application. The following equation can be used to determine the package maximum internal power dissipation. EQUATION 5-3: EQUATION 5-4: EQUATION 5-5: Package Type = SOT-223-5 Input Voltage Range = 8V to 24V VIN maximum = 24V VOUT typical = 5.0V IOUT =70 mA maximum 1 2 3 4 5 COUT 4.7 µF Ceramic + + CIN 1µF 24 VDC 5 1N4002 Ceramic PWRGD VOUT VIN 5V@70 mA 10 k Ω MCP1791 P LDO V IN MAX ) () V OUT MIN () – () I OUT MAX ) () × = PLDO = LDO Pass device internal power dissipation VIN(MAX) = Maximum input voltage VOUT(MIN) = LDO minimum output voltage T JMAX () P TOTAL R θ JA × T AMAX + = TJ(MAX) = Maximum continuous junction temperature. PTOTAL = Total device power dissipation. R θ JA = Thermal resistance from junction to ambient. TAMAX = Maximum ambient temperature. P DMAX () T JMAX () T AMAX () – () R θ JA --------------------------------------------------- = PD(MAX) = Maximum device power dissipation. TJ(MAX) = Maximum continuous junction temperature. TA(MAX) = Maximum ambient temperature. R θ JA = Thermal resistance from junction to ambient. T JRISE () P DMAX () R θ JA × = TJ(RISE) = Rise in device junction temperature over the ambient temperature. PTOTAL = Maximum device power dissipation. R θ JA = Thermal resistance from junction-to-ambient. T J T JRISE () T A + = TJ = Junction Temperature. TJ(RISE) = Rise in device junction temperature over the ambient temperature. TA = Ambient temperature. |
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