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MCP1790-3002E/EB Datasheet(PDF) 18 Page - Microchip Technology

Part # MCP1790-3002E/EB
Description  70 mA, High Voltage Regulator
PDF  34 Pages
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

MCP1790-3002E/EB Datasheet(HTML) 18 Page - Microchip Technology

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MCP1790/MCP1791
DS22075A-page 18
© 2008 Microchip Technology Inc.
5.0
APPLICATION CIRCUITS /
ISSUES
5.1
Typical Application
The MCP1790/MCP1791 is most commonly used as a
voltage regulator. It’s high voltage input capability and
thermal protection make it ideal for automotive and 24V
industrial applications.
FIGURE 5-1:
Typical Application.
5.1.1
APPLICATION INPUT CONDITIONS
5.2
Power Calculations
5.2.1
POWER DISSIPATION
The internal power dissipation of the MCP1790/
MCP1791 is a function of input voltage, output voltage
and output current. The power dissipation, as a result
of the quiescent current draw, is so low, it is insignifi-
cant (70.0 µA x VIN). The following equation can be
used to calculate the internal power dissipation of the
LDO.
EQUATION 5-1:
The
maximum
continuous
operating
junction
temperature specified for the MCP1790/MCP1791 is
+125°C. To estimate the internal junction temperature
of the MCP1790/MCP1791, the total internal power
dissipation is multiplied by the thermal resistance from
junction to ambient (R
θ
JA). The thermal resistance from
junction to ambient for the SOT-223-5 package is
estimated at 62°C/W.
EQUATION 5-2:
The maximum power dissipation capability for a
package can be calculated given the junction-to-
ambient thermal resistance and the maximum ambient
temperature for the application. The following equation
can be used to determine the package maximum
internal power dissipation.
EQUATION 5-3:
EQUATION 5-4:
EQUATION 5-5:
Package Type = SOT-223-5
Input Voltage Range = 8V to 24V
VIN maximum = 24V
VOUT typical = 5.0V
IOUT =70 mA maximum
1
2
3
4
5
COUT
4.7 µF Ceramic
+
+
CIN
1µF
24 VDC
5
1N4002
Ceramic
PWRGD
VOUT
VIN
5V@70 mA
10 k
Ω
MCP1791
P
LDO
V
IN MAX
)
()
V
OUT MIN
()
–
() I
OUT MAX
)
()
×
=
PLDO = LDO Pass device internal power
dissipation
VIN(MAX) = Maximum input voltage
VOUT(MIN) = LDO minimum output voltage
T
JMAX
()
P
TOTAL
R
θ
JA
×
T
AMAX
+
=
TJ(MAX)
=
Maximum continuous junction
temperature.
PTOTAL
=
Total device power dissipation.
R
θ
JA
=
Thermal resistance from junction
to ambient.
TAMAX
=
Maximum ambient temperature.
P
DMAX
()
T
JMAX
()
T
AMAX
()
–
()
R
θ
JA
---------------------------------------------------
=
PD(MAX)
=
Maximum device power
dissipation.
TJ(MAX)
=
Maximum continuous junction
temperature.
TA(MAX)
=
Maximum ambient temperature.
R
θ
JA
=
Thermal resistance from junction
to ambient.
T
JRISE
()
P
DMAX
()
R
θ
JA
×
=
TJ(RISE) = Rise in device junction
temperature over the ambient
temperature.
PTOTAL = Maximum device power
dissipation.
R
θ
JA
=
Thermal resistance from
junction-to-ambient.
T
J
T
JRISE
()
T
A
+
=
TJ = Junction Temperature.
TJ(RISE) = Rise in device junction
temperature over the ambient
temperature.
TA = Ambient temperature.



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