MCP1790-5002ESLASHEB datasheet(5/34 Pages) MICROCHIP

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DS22075A-page 5

MCP1790/MCP1791

Short Circuit Foldback Voltage Corner

VFOLDBACK

—4.2

—

VR = 5.0V

Falling VOUT, RLOAD <0.1 Ω

—3.0

—

VR = 3.3V

Falling VOUT, RLOAD <0.1 Ω

—2.7

—

VR = 3.0V

Falling VOUT, RLOAD <0.1 Ω

Short Circuit Foldback Current

—

105

—

VOUT ~= 0V,

RLOAD <0.1 Ω,

VR = 5.0V (Note 2)

—99

—

VR = 3.3V (Note 2)

—99

—

VR = 3.0V (Note 2)

Startup Voltage Overshoot

VOVER

—0.10

—

% VOUT VIN = 0V to 6.0V

Dropout Voltage

VDROPOUT

—

700

1300

IOUT = 70 mA, (Note 6)

Dropout Current

IOUT = 0 mA

IDO

—

130

—

µA

VR = 5.0V, VIN = 4.500V

—75

—

µA

VR = 3.3V, VIN = 4.500V

—75

—

µA

VR = 3.0V, VIN = 4.500V

Shutdown Input

Logic High Input

VSHDN-HIGH

2.4

—VIN(MAX)

Logic Low Input

VSHDN-LOW

0—

0.8

Shutdown Input Leakage Current

SHDNILK

—

0.100

3.0

0.500

5.0

µA

SHDN = GND

SHDN = 6V

Power Good Characteristics

PWRGD Input Voltage Operating

Range

VPWRGD_VIN

2.8

——

PWRGD Threshold Voltage

(Referenced to VOUT)

VPWRGD_TH

%VOUT Falling Edge of VOUT

PWRGD Threshold Hysteresis

VPWRGD_HYS

1.0

2.0

3.0

%VOUT Rising Edge of VOUT

PWRGD Output Voltage LOW

VPWRGD_L

—0.2

0.4

VIPWRGD SINK = 5.0 mA,

VOUT = 0V

PWRGD Output Sink Current

IPWRGD_L

5.0

—

VPWRGD <= 0.4V

PWRGD Leakage

IPWRGD_LK

—1.0

—

VPWRGD = VIN = 6.0V

PWRGD Time Delay

TPG

—

µs

Rising Edge

AC/DC CHARACTERISTICS (CONTINUED)

Electrical Specifications: Unless otherwise noted, V

IN = VOUT(MAX) + VDROPOUT(MAX), (Note 1), IOUT = 1 mA,

COUT = 4.7 µF (X7R Ceramic), CIN = 4.7 µF (X7R Ceramic), TA = +25°C, SHDN > 2.4V.

Boldface type applies for junction temperatures, T

J (Note 5) of -40°C to +125°C.

Parameters

Symbol

Min

Typ

Max

Units

Conditions

Note 1:

The minimum VIN, VIN(MIN) must meet two conditions: VIN ≥ 6.0V and VIN ≥ VOUT(MAX) + VDROPOUT(MAX).

VR is the nominal regulator output voltage.

Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is

tested over a load range from 1 mA to the maximum specified output current.

The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction

temperature and the thermal resistance from junction to air. (i.e., TA, TJ, θJA). Exceeding the maximum allowable power

dissipation will cause the device operating junction temperature to exceed the maximum 165°C rating. Sustained

junction temperatures above 165°C can impact the device reliability.

The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the

desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the

ambient temperature is not significant.

Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below its

nominal value that was measured with an input voltage of VIN = VR + VDROPOUT(MAX).

Sustained junction temperatures above 165°C can impact the device reliability.

The Short Circuit Recovery Time test is done by placing the device into a short circuit condition and then removing the

short circuit condition before the device die temperature reaches 125 °C. If the device goes into thermal shutdown, then

the Short Circuit Recovery Time will depend upon the thermal dissipation properties of the package and circuit board.

TCVOUT = (VOUT-HIGH - VOUT-LOW) *10^6 / (VR * ΔTemperature), VOUT-HIGH = highest voltage measured over the tem-

peraturerange. VOUT-LOW = lowest voltage measured over the temperature range.

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