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MCP1825 Datasheet(PDF) 21 Page - Microchip Technology |
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MCP1825 Datasheet(HTML) 21 Page - Microchip Technology |
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21 / 38 page ![]() © 2008 Microchip Technology Inc. DS22056B-page 21 MCP1825/MCP1825S The maximum power dissipation capability for a package can be calculated given the junction-to- ambient thermal resistance and the maximum ambient temperature for the application. Equation 5-4 can be used to determine the package maximum internal power dissipation. EQUATION 5-4: EQUATION 5-5: EQUATION 5-6: 5.3 Typical Application Internal power dissipation, junction temperature rise, junction temperature and maximum power dissipation is calculated in the following example. The power dissipation as a result of ground current is small enough to be neglected. 5.3.1 POWER DISSIPATION EXAMPLE 5.3.1.1 Device Junction Temperature Rise The internal junction temperature rise is a function of internal power dissipation and the thermal resistance from junction-to-ambient for the application. The thermal resistance from junction-to-ambient (R θ JA) is derived from EIA/JEDEC standards for measuring thermal resistance. The EIA/JEDEC specification is JESD51. The standard describes the test method and board specifications for measuring the thermal resistance from junction to ambient. The actual thermal resistance for a particular application can vary depending on many factors such as copper area and thickness. Refer to AN792, “A Method to Determine How Much Power a SOT23 Can Dissipate in an Application” (DS00792), for more information regarding this subject. P DMAX () T JMAX () T AMAX () – () R θ JA --------------------------------------------------- = PD(MAX) = Maximum device power dissipation TJ(MAX) = maximum continuous junction temperature TA(MAX) = maximum ambient temperature R θ JA = Thermal resistance from junction-to- ambient T JRISE () P DMAX () R θ JA × = TJ(RISE) = Rise in device junction temperature over the ambient temperature PD(MAX) = Maximum device power dissipation R θ JA = Thermal resistance from junction-to- ambient T J T JRISE () T A + = TJ = Junction temperature TJ(RISE) = Rise in device junction temperature over the ambient temperature TA = Ambient temperature Package Package Type = TO-220-5 Input Voltage VIN =3.3V ± 5% LDO Output Voltage and Current VOUT =2.5V IOUT =500 mA Maximum Ambient Temperature TA(MAX) =60°C Internal Power Dissipation PLDO(MAX) =(VIN(MAX) – VOUT(MIN)) x IOUT(MAX) PLDO = ((3.3V x 1.05) – (2.5V x 0.975)) x 500 mA PLDO = 0.514 Watts TJ(RISE) =PTOTAL x RθJA TJRISE = 0.514 W x 29.3° C/W TJRISE = 15.06°C |
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