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CLT250 Datasheet(PDF) 1 Page - Clairex Technologies, Inc |
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CLT250 Datasheet(HTML) 1 Page - Clairex Technologies, Inc |
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1 / 1 page ![]() Clairex Technologies, Inc. 1301 East Plano Parkway Plano, Texas 75074-8524 Phone: 972-265-4900 Fax: 972-265-4949 www.clairex.com CLT250 PRELIMINARY NPN Silicon Phototransistor Clairex Technologies, Inc. features • ±18° acceptance angle • Miniature hermetic package • High sensitivity • Spectrally matched to the CLE250 • RoHS compliant description The CLT250 is an NPN silicon phototransistor mounted in a hermetically sealed package with a glass lens. This package is ideally suited for mounting into double-sided PC boards and is capable of reliable operation over a wide temperature range. absolute maximum ratings (TA = 25°C unless otherwise stated) storage temperature ....................................................................... -65°C to +150°C operating temperature .................................................................... -65°C to +125°C lead soldering temperature (1) .......................................................................... 260°C collector-emitter voltage...................................................................................... 30V emitter-collector voltage........................................................................................ 5V continuous power dissipation (2)..................................................................... 125mW notes: 1. 5 seconds maximum. 2. Derate linearly 1.0mW/°C from 25°C free air temperature to TA = +125°C. Clairex reserves the right to make changes at any time to improve design and to provide the best possible product. ® June, 2006 electrical characteristics (at TA = 25°C unless otherwise noted) symbol parameter min typ max units test conditions IL Light current (3) 7.0 - - mA VCE = 5V, H = 20mW/cm 2 ICEO Collector dark current - - 100 nA VCE = 10V, H = 0 V(BR)CEO Collector-emitter breakdown voltage 30 - - V VCE = 10V, IC = 100µA V(BR)ECO Emitter-Collector breakdown voltage 5.0 - - V VCE = 10V, IE = 100µA VCE(SAT) Collector-emitter saturation voltage - - 0.4 V IC = 1mA, H = 20mW/cm 2 ΘHP Total angle at half sensitivity points - 36 - deg. tr, tf Radiation rise and fall time - 15 - µs VCE = 5V, IC = 1mA, RL = 1KΩ notes: 3. The radiation source is a tungsten lamp operating at a color temperature of 2854°K. ALL DIMENSIONS ARE IN INCHES (MILLIMETERS) 0.125 (3.18) 0.102 (2.59) 0.062 (1.57) 0.057 (1.45) 0.090 (2.29) 0.080 (2.03) 0.007 (0.18) 0.003 (0.08) 0.093 (2.36) 0.083 (2.11) 0.024 (0.61) 0.016 (0.41) COLLECTOR EMITTER Revised 4/22/06 |
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