Three Phase Rectifier Bridge

PSDI 33/06

I

C25

= 44 A

with IGBT and Fast Recovery Diode

V

CES

= 600 V

for Braking System

I

FAV25

= 18 A

V

RRM

= 1200 V

Features

•

High level of integration - only one

power semiconductor module required

for the whole braking system module

•

Isolation voltage 3600 V

∼

•

Planar glass passivated chips

•

Ultrafast freewheel diode

•

Leads suitable for PC board

soldering

•

Thermistor (optional)

Applications

•

Drive inverters with brake system

Advantages

•

Easy to mount with two screws

•

Space and weight savings

•

high temperature and power

cycling capability

•

Small and light weight

•

2 functions in one package

POWERSEM GmbH, Walpersdorfer Str. 53

D - 91126 Schwabach

Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20

Data according to IEC 60747 refer to a single diode

unless otherwise stated

Preliminary Data Sheet

IGBT

Symbol

Test Conditions

Maximum Ratings

V

CES

T

600

V

V

GES

continuous

±20

V

I

C25

T

44

A

I

C80

T

30

A

RBSOA

V

I

A

clamped inductive load, L = 100 µH

V

t

SC

V

µs

T

Symbol

Test Conditions

Characteristic Values

T

V

CE(sat)

V

max.

1.8

V

V

CE(sat)

V

typ.

1.5

V

V

CE(sat)

T

1.6

V

V

GE(th)

V

min.

3

V

V

GE(th)

V

max.

5

V

I

CES

V

0.04

mA

I

CES

T

1

mA

I

GES

V

max.

100

nA

t

d(on)

typ.

31

ns

t

r

typ.

50

ns

t

d(off)

typ.

291

ns

t

f

typ.

70

ns

E

on

typ.

0.60

mJ

E

off

typ.

0.31

mJ

C

ies

V

typ.

1600

pF

Q

Gon

V

140

nC

R

thJC

max.

0.96

K/W

R

thJH

max.

tbd

K/W

}

Module

Symbol

Test Conditions

Maximum Ratings

T

VJ

-40...+150

°C

T

JM

150

°C

T

stg

-40...+150

°C

V

isol

50/60 Hz

t = 1 min

3000

V

∼

Iisol

≤ 1 mA t = 1 s

3600

V

∼

M

d

Mounting torque (M 4)

1.5-2.0

Nm

Weight

typ.

24

g

inductive load, T

V

V

Caution: These Devices are sensitive

to electrostatic discharge. Users should

observe proper ESD handling precautions.

NTC optional

1

3

A

PS M

V

G

E

XK