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APT25GF120JCU2 Datasheet(PDF) 2 Page - Microsemi Corporation

Part # APT25GF120JCU2
Description  ISOTOP짰 Boost chopper NPT IGBT SiC chopper diode
PDF  6 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT25GF120JCU2 Datasheet(HTML) 2 Page - Microsemi Corporation

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APT25GF120JCU2
www.microsemi.com
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Tj = 25°C
250
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 1200V
Tj = 125°C
500
µA
Tj = 25°C
2.5
3.2
3.7
VCE(sat)
Collector Emitter saturation Voltage
VGE =15V
IC = 25A
Tj = 125°C
4.0
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 1mA
4
6
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
400
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
1650
Coes
Output Capacitance
250
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
110
pF
Qg
Total gate Charge
160
Qge
Gate – Emitter Charge
10
Qgc
Gate – Collector Charge
VGE = 15V
VBus = 600V
IC =25A
70
nC
Td(on)
Turn-on Delay Time
60
Tr
Rise Time
50
Td(off)
Turn-off Delay Time
305
Tf
Fall Time
Inductive Switching (25°C)
VGE = 15V
VBus = 600V
IC = 25A
RG = 22Ω
30
ns
Td(on)
Turn-on Delay Time
60
Tr
Rise Time
50
Td(off)
Turn-off Delay Time
346
Tf
Fall Time
Inductive Switching (125°C)
VGE = 15V
VBus = 600V
IC = 25A
RG = 22Ω
40
ns
Eon
Turn-on Switching Energy
Tj = 125°C
2.1
Eoff
Turn-off Switching Energy
VGE = 15V
VBus = 600V
IC = 25A
RG = 22Ω
Tj = 125°C
1.5
mJ
Isc
Short Circuit data
VGE ≤15V ; VBus = 900V
tp ≤ 10µs ; Tj = 125°C
150
A
Chopper SiC diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
Tj = 25°C
32
200
IRM
Maximum Reverse Leakage Current
VR=1200V
Tj = 175°C
56
1000
µA
IF
DC Forward Current
Tc = 125°C
10
A
Tj = 25°C
1.6
1.8
VF
Diode Forward Voltage
IF = 10A
Tj = 175°C
2.3
3
V
QC
Total Capacitive Charge
IF = 10A, VR = 600V
di/dt =500A/µs
40
nC
f = 1MHz, VR = 200V
96
C
Total Capacitance
f = 1MHz, VR = 400V
69
pF



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