APT50DL60BCT(G)

DYNAMIC CHARACTERISTICS

FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL

THERMAL AND MECHANICAL CHARACTERISTICS

Microsemi reserves the right to change, without notice, the specifications and information contained herein.

Symbol

Characteristic / Test Conditions

Min

Typ

Max

Unit

t

rr

Reverse Recovery Time

I

52

ns

t

rr

Reverse Recovery Time

I

V

399

Q

rr

Reverse Recovery Charge

1498

nC

I

RRM

Maximum Reverse Recovery Current

9

Amps

t

rr

Reverse Recovery Time

I

V

449

ns

Q

rr

Reverse Recovery Charge

3734

nC

I

RRM

Maximum Reverse Recovery Current

15

Amps

t

rr

Reverse Recovery Time

I

V

284

ns

Q

rr

Reverse Recovery Charge

5134

nC

I

RRM

Maximum Reverse Recovery Current

34

Amps

Symbol

Characteristic / Test Conditions

Min

Typ

Max

Unit

R

θJC

Junction-to-Case Thermal Resistance

0.63

°C/W

W

T

Package Weight

0.22

oz

5.9

g

Torque

Maximum Mounting Torque

10

lb·in

1.1

N·m

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

1.0

RECTANGULAR PULSE DURATION (seconds)

FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION

Peak TJ = PDM x ZθJC + TC

Duty Factor D =

2

t2

t1

Note:

Dissipated Power

(Watts)

T

T

Z

impedances: Case to sink,

sink to ambient, etc. Set to

zero when modeling only

the case to junction.

0.316

0.312

0.0046

0.1483