APT150DL60B2 datasheet(1/4 Pages) MICROSEMI

Part #	APT150DL60B2

Description	Ultrasoft Recovery Rectifi er Diode

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	MICROSEMI [Microsemi Corporation]

Direct Link	http://www.microsemi.com

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PRODUCT BENEFITS

• Soft Switching - High Qrr

• Low Noise Switching

- Reduced Ringing

• Higher Reliability Systems

• Minimizes or eliminates

snubber

PRODUCT FEATURES

• Ultrasoft Recovery Times (trr)

• Popular TO-247 Package or

Surface Mount D3PAK Package

• Ultra Low Forward Voltage

• Low Leakage Current

PRODUCT APPLICATIONS

• Anti-Parallel Diode

-Switchmode Power Supply

-Inverters

• Applications

- Induction Heating

• Resonant Mode Circuits

-ZVS and ZCS Topologies

- Phase Shifted Bridge

APT150DL60B2(G)

600V 150A

*G Denotes RoHS Compliant, Pb Free Terminal Finish.

MAXIMUM RATINGS

All Ratings: T

C = 25°C unless otherwise speciﬁed.

1 - Cathode

2 - Anode

Back of Case - Cathode

1

2

Microsemi Website - http://www.microsemi.com

Ultrasoft Recovery Rectiﬁer Diode

Symbol

Characteristic / Test Conditions

Ratings

Unit

V

R

Maximum D.C. Reverse Voltage

600

Volts

V

RRM

Maximum Peak Repetitive Reverse Voltage

V

RWM

Maximum Working Peak Reverse Voltage

I

F(AV)

Maximum Average Forward current 1 (T

C = 112°C, Duty Cycle = 0.5)

150

Amps

I

F(RMS)

RMS Forward Currrent (Square wave, 50% duty)

450

I

FSM

Non-Repetitive Forward Surge Current (T

J = 45°C, 8.3 ms)

600

T

J, TSTG

Operating and Storage Junction Temperature Range

-55 to 175

°C

T

L

Lead Temperature for 10 Seconds

300

Symbol

Characteristic / Test Conditions

Min

Typ

Max

Unit

V

F

Forward Voltage

I

F = 150A

1.25

1.6

Volts

I

F = 300A

2.0

I

F = 150A, TJ = 125°C

1.25

I

RM

Maximum Reverse Leakage Current

V

R = 600V

25

μA

V

R = 600V, TJ = 125°C

250

C

T

Junction Capacitance, V

R = 200V

139

pF

STATIC ELECTRICAL CHARACTERISTICS

1

2

(B2)

T-Max

®

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