APTC60DAM24T1G

www.microsemi.com

6 – 6

1

10

100

1000

0.3

0.5

0.7

0.9

1.1

1.3

1.5

Source to Drain Diode Forward Voltage

Delay Times vs Current

td(on)

td(off)

0

20

40

60

80

100

120

140

0

20406080 100 120 140 160

L=100µH

Rise and Fall times vs Current

0

10

20

30

40

50

60

70

0

20

40

60

80 100 120 140 160

L=100µH

Switching Energy vs Current

0

1

2

3

4

0

20

40

60

80 100 120 140 160

L=100µH

0

1

2

3

4

5

0

5

10

15

20

25

Gate Resistance (Ohms)

Switching Energy vs Gate Resistance

L=100µH

hard

switching

ZCS

ZVS

0

50

100

150

200

250

300

10 20 30 40 50 60 70 80 90

Operating Frequency vs Drain Current

D=50%

“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon

Technologies AG”.

Microsemi reserves the right to change, without notice, the specifications and information contained herein

Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522

5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.