2SD2653_1 datasheet(2/3 Pages) ROHM

2 / 3 page

2SD2653

Transistors

Rev.B

2/2

Electrical characteristic curves

0.001

0.01

0.1

COLLECTOR CURRENT : IC (A)

1000

100

=100°C

=−40°C

=25°C

VCE

=2V

Pulsed

Fig.1 DC current gain

vs. collector current

0.001

0.01

0.1

COLLECTOR CURRENT : IC (A)

0.001

0.01

0.1

IC/IB

=20/1

VCE

=2V

Pulsed

=100°C

=−40°C

=25°C

Fig.2 Base-emitter saturation voltage

vs. collector current

0.001

0.01

0.1

COLLECTOR CURRENT : IC (A)

0.001

0.01

0.1

=25°C

Pulsed

IC/IB

=10/1

IC/IB

=20/1

IC/IB

=50/1

Fig.3 Collector-emitter saturation voltage

vs. collector current

0.5

1.5

BASE TO EMITTER CURRENT : VBE (V)

0.001

0.01

0.1

VCE

=2V

Pulsed

=100°C

=−40°C

=25°C

Fig.4 Grounded emitter propagation

characteristics

0.001

0.01

0.1

EMITTER CURRENT : IE (A)

1000

100

=25°C

VCE

=2V

=100MHz

Fig.5 Gain bandwidth product

vs. emitter current

0.01

0.1

1000

100

=25°C

VCE

=5V

=100MHz

tstg

tdon

Fig.6 Switching time

COLLECTOR CURRENT : IC (A)

110

100

0.1

100

1000

=1MHz

=0A

=25˚C

Cib

Cob

Fig.7 Collector output capacitance

vs. collector-base voltage

Emitter input capacitance

vs. emitter-base voltage

EMITTER TO BASE VOLTAGE : VEB(V)

COLLECTOR TO BASE VOLTAGE : VCB(V)

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