APTC90AM60SCTG

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SiC parallel diode ratings and characteristics

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

Maximum Peak Repetitive Reverse Voltage

1200

V

64

400

Maximum Reverse Leakage Current

112

2000

µA

DC Forward Current

Tc = 100°C

20

A

1.6

1.8

Diode Forward Voltage

2.3

3

V

Total Capacitive Charge

di/dt =1000A/µs

80

nC

192

C

Total Capacitance

138

pF

Thermal and package characteristics

Symbol

Characteristic

Min

Typ

Max

Unit

Transistor

0.27

Series diode

0.65

Junction to Case Thermal Resistance

SiC Parallel diode

1

°C/W

RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz

4000

V

Operating junction temperature range

-40

150

Storage Temperature Range

-40

125

Operating Case Temperature

-40

100

°C

Torque Mounting torque

To Heatsink

M5

2.5

4.7

N.m

Wt

Package Weight

160

g

Symbol

Characteristic

Min

Typ

Max

Unit

Resistance @ 25°C

50

k

Ω

5

%

3952

K

∆B/B

4

%

⎥

⎦

⎤

⎢

⎣

⎡

⎟⎟

⎠

⎞

⎜⎜

⎝

⎛

−

=

T

T

B

R

R

T

1

1

exp

25

85

/

25

25

T: Thermistor temperature