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APTC90DAM60T1G Datasheet(PDF) 5 Page - Microsemi Corporation |
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APTC90DAM60T1G Datasheet(HTML) 5 Page - Microsemi Corporation |
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5 / 5 page ![]() APTC90DAM60T1G www.microsemi.com 5 – 5 Hard switching ZCS ZVS 0 100 200 300 400 20 25 30 35 40 45 50 ID, Drain Current (A) Operating Frequency vs Drain Current VDS=600V D=50% RG=3.8Ω TJ=125°C TC=75°C Switching Energy vs Current Eon Eoff 0 2 4 6 8 10 20 30 40 50 60 70 80 ID, Drain Current (A) VDS=600V RG=3.8Ω TJ=125°C L=100µH ON resistance vs Temperature 0.5 1.0 1.5 2.0 2.5 3.0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Switching Energy vs Gate Resistance Eon Eoff 0 1 2 3 4 5 6 7 0 5 10 15 20 Gate Resistance (Ohms) VDS=600V ID=52A TJ=125°C L=100µH “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. |
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