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APTDF30H1201G Datasheet(PDF) 3 Page - Microsemi Corporation

Part # APTDF30H1201G
Description  Fast Diode Full Bridge Power Module
PDF  4 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTDF30H1201G Datasheet(HTML) 3 Page - Microsemi Corporation

  APTDF30H1201G Datasheet HTML 1Page - Microsemi Corporation APTDF30H1201G Datasheet HTML 2Page - Microsemi Corporation APTDF30H1201G Datasheet HTML 3Page - Microsemi Corporation APTDF30H1201G Datasheet HTML 4Page - Microsemi Corporation  
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APTDF30H1201G
www.microsemi.com
3- 4
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
TJ=25°C
TJ=125°C
0
20
40
60
80
0.0
1.0
2.0
3.0
4.0
VF, Anode to Cathode Voltage (V)
Forward Current vs Forward Voltage
Trr vs. Current Rate of Charge
15 A
30 A
45 A
0
100
200
300
400
500
0
200
400
600
800 1000 1200
-diF/dt (A/µs)
TJ=125°C
VR=800V
QRR vs. Current Rate Charge
15 A
30 A
45 A
0
1
2
3
4
0
200
400
600
800
1000 1200
-diF/dt (A/µs)
TJ=125°C
VR=800V
IRRM vs. Current Rate of Charge
15 A
30 A
45 A
0
5
10
15
20
25
30
0
200
400
600
800 1000 1200
-diF/dt (A/µs)
TJ=125°C
VR=800V
Capacitance vs. Reverse Voltage
0
40
80
120
160
200
1
10
100
1000
VR, Reverse Voltage (V)
0
10
20
30
40
50
25
50
75
100
125
150
175
Case Temperature (ºC)
Max. Average Forward Current vs. Case Temp.
Duty Cycle = 0.5
TJ=175°C



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