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APTM60H23FT1G Datasheet(PDF) 1 Page - Microsemi Corporation

Part # APTM60H23FT1G
Description  Full - Bridge MOSFET Power Module
PDF  5 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTM60H23FT1G Datasheet(HTML) 1 Page - Microsemi Corporation

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APTM60H23FT1G
www.microsemi.com
1 – 5
79
1
4
NTC
11
810
12
3
6
Q1
Q2
5
Q4
Q3
2
Pins 3/4 must be shorted together
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
600
V
Tc = 25°C
20
ID
Continuous Drain Current
Tc = 80°C
15
IDM
Pulsed Drain current
125
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
230
m
Ω
PD
Maximum Power Dissipation
Tc = 25°C
208
W
IAR
Avalanche current (repetitive and non repetitive)
17
A
Application
•
Welding converters
•
Switched Mode Power Supplies
•
Uninterruptible Power Supplies
•
Motor control
Features
•
Power MOS 8™ FREDFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Fast intrinsic reverse diode
-
Avalanche energy rated
-
Very rugged
•
Very low stray inductance
-
Symmetrical design
•
Internal thermistor for temperature monitoring
•
High level of integration
Benefits
•
Outstanding performance at high frequency operation
•
Direct mounting to heatsink (isolated package)
•
Low junction to case thermal resistance
•
Solderable terminals both for power and signal for
easy PCB mounting
•
Low profile
•
Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
•
RoHS Compliant
Full - Bridge
MOSFET Power Module
VDSS = 600V
RDSon = 190mΩ typ @ Tj = 25°C
ID = 20A @ Tc = 25°C


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