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APTM100A23STG Datasheet(PDF) 7 Page - Microsemi Corporation

Part # APTM100A23STG
Description  Phase leg Series & parallel diodes MOSFET Power Module
PDF  7 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTM100A23STG Datasheet(HTML) 7 Page - Microsemi Corporation

  APTM100A23STG Datasheet HTML 1Page - Microsemi Corporation APTM100A23STG Datasheet HTML 2Page - Microsemi Corporation APTM100A23STG Datasheet HTML 3Page - Microsemi Corporation APTM100A23STG Datasheet HTML 4Page - Microsemi Corporation APTM100A23STG Datasheet HTML 5Page - Microsemi Corporation APTM100A23STG Datasheet HTML 6Page - Microsemi Corporation APTM100A23STG Datasheet HTML 7Page - Microsemi Corporation  
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APTM100A23STG
www.microsemi.com
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Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
100
120
140
160
10
20
30
40
50
60
70
80
ID, Drain Current (A)
VDS=667V
RG=2.5Ω
TJ=125°C
L=100µH
Rise and Fall times vs Current
tr
tf
0
10
20
30
40
50
60
10
20
30
40
50
60
70
80
ID, Drain Current (A)
VDS=667V
RG=2.5Ω
TJ=125°C
L=100µH
Switching Energy vs Current
Eon
Eoff
0
1
2
3
4
10
20
30
40
50
60
70
80
ID, Drain Current (A)
VDS=667V
RG=2.5Ω
TJ=125°C
L=100µH
Eon
Eoff
Eoff
0
1
2
3
4
5
0358
10
13
15
Gate Resistance (Ohms)
Switching Energy vs Gate Resistance
VDS=667V
ID=36A
TJ=125°C
L=100µH
Hard
switching
ZCS
ZVS
0
50
100
150
200
250
300
14
18
22
26
30
34
ID, Drain Current (A)
Operating Frequency vs Drain Current
VDS=667V
D=50%
RG=2.5Ω
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.20.4 0.60.8
1
1.2 1.41.6 1.8
VSD, Source to Drain Voltage (V)
Source to Drain Diode Forward Voltage
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.



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