APTM100UM65SCAVG

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8 – 8

Typical SiC Diode Performance Curve

Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

0.9

0.7

0.5

0.3

0.1

0.05

Single Pulse

0

0.04

0.08

0.12

0.16

0.2

0.00001

0.0001

0.001

0.01

0.1

1

10

Rectangular Pulse Duration (Seconds)

Forward Characteristics

0

60

120

180

240

00.5

1

1.5

22.533.5

Reverse Characteristics

0

150

300

450

600

750

900

1050

1200

400

600

800 1000 1200 1400 1600

Capacitance vs.Reverse Voltage

0

1000

2000

3000

4000

5000

6000

7000

8000

1

10

100

1000

Microsemi reserves the right to change, without notice, the specifications and information contained herein

Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103

5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262

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