2N918UB datasheet(2/2 Pages) MICROSEMI

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TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

NPN SILICON SWITCHING TRANSISTOR

Qualified per MIL-PRF-19500/301

T4-LDS-0010 Rev. 1 (072019)

Page 2 of 2

DYNAMIC CHARACTERISTICS

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

Magnitude of Small-Signal Short-Circuit

Forward Current Transfer Ratio

IC = 4mAdc, VCE = 10Vdc, f = 100MHz

|hfe|

6.0

Output Capacitance

VCB = 0Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz

VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz

Cobo1

Cobo2

3.0

1.7

Input Capacitance

VEB = 0.5Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz

Cibo

1.7

Noise Figure (1)

VCE = 6V, IC = 1.0mA, f = 60MHz

gs = 2.5mmho

6.0

Small-Signal Power Gain (1)

VCB = 12V, IC = 6.0mA, f = 200MHz

Gpe

Collector-Base Time Constant (1)

VCB = 10V, IE = -4.0mA, f = 79.8MHz

Rb’CC

Oscillator Power Output (1)

VCB = 1.5V, IC = 8.0mA, f ≥ 500MHz

Collector Efficiency

VCB = 15V, IC = 8.0mA, f > 500MHz

NOTES:

(1) For more detail see MIL-PRF-19500/301

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