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DXT2011P5 Datasheet(PDF) 4 Page - Diodes Incorporated

Part # DXT2011P5
Description  100V NPN LOW SAT MEDIUM POWER TRANSISTOR PowerDI짰5
PDF  7 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DXT2011P5 Datasheet(HTML) 4 Page - Diodes Incorporated

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DXT2011P5
Document number: DS32069 Rev. 2 - 2
4 of 7
www.diodes.com
March 2010
© Diodes Incorporated
DXT2011P5
PowerDI is a registered trademark of Diodes Incorporated.
A Product Line of
Diodes Incorporated
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
V(BR)CBO
200
235
−
V
IC = 100μA
Collector-Emitter Breakdown Voltage (Note 7)
V(BR)CEO
100
115
−
V
IC = 10mA
Emitter-Base Breakdown Voltage
V(BR)EBO
7
8.1
−
V
IE = 100μA
Collector Cutoff Current
ICBO
−
−
−
−
20
0.5
nA
μA
VCB = 150V
VCB = 150V, Tamb = 100 °C
Collector Cutoff Current
ICER
R
≤1kΩ
−
−
−
−
20
0.5
nA
μA
VCB = 150V
VCB = 150V, Tamb = 100 °C
Emitter Cutoff Current
IEBO
−
−
10
nA
VEB = 6V
Collector-Emitter Saturation Voltage (Note 7)
VCE(sat)
−
−
−
−
21
50
95
180
35
65
125
220
mV
IC = 0.1A, IB =-5mA
IC = 1A, IB = 100mA
IC = 2A, IB = 100mA
IC = 5A, IB = 500mA
Base-Emitter Saturation Voltage (Note 7)
VBE(sat)
−
1020
1120
mV
IC = 5A, IB = 500mA
Base-Emitter Turn-On Voltage (Note 7)
VBE(on)
−
920
1000
mV
VCE = 2V, IC = 5A
DC Current Gain (Note 7)
hFE
100
100
30
10
230
200
60
20
−
300
−
−
−
VCE = 2V, IC = 10mA
VCE = 2V, IC = 2A
VCE = 2V, IC = 5A
VCE = 2V, IC = 10A
Transition Frequency
fT
−
130
−
MHz
VCE = 10V, IC = 100mA,
f = 50MHz
Output Capacitance
Cobo
−
26
−
pF
VCB = 10V, f = 1MHz
Switching Times
ton
toff
⎯
⎯
41
1010
⎯
⎯
ns
VCC = 10V, IC = 1A,
IB1 = IB2 = 100mA
Notes:
7. Pulse Test: Pulse width
≤300μs. Duty cycle ≤2.0%.



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