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GENERAL DESCRIPTION

The MDS70 is a COMMON BASE bipolar transistor. It is designed for

MODE S pulsed systems in the frequency band 1030-1090 MHz. The device

has gold thin-film metallization for proven highest MTTF. The transistor

includes input prematch for broadband capacity. Low thermal resistance

package reduces junction temperature, extends life.

CASE OUTLINE

55CX, STYLE 1

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25

225 Watts

Maximum Voltage and Current

BVces

Collector to Base Voltage

65 Volts

BVebo

Emitter to Base Voltage

3.5 Volts

Ic

Collector Current

5.0 Amps

Maximum Temperatures

Storage Temperature

- 65 to + 150

Operating Junction Temperature

+ 200

ELECTRICAL CHARACTERISTICS @ 25

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Pout

Power Out

70

95

Watts

Pg

Power Gain

10.3

11.65

dB

RT

Rise Time

80

ns

Collector Efficiency

F = 1030-1090 MHz

Vcc = 50 Volts

Pin = 6.5W

Pulse Mod: Mode S

2

35

%

VSWR

1

Load Mismatch Tolerance

1090 MHz

5:1

BVebo

Emitter to Base Breakdown

Ie = 5 mA

3.5

Volts

BVces

Collector to Emitter Breakdown

Ic = 25 mA

65

Volts

DC - Current Gain

Ic = 500 mA, Vce = 5 V

20

Thermal Resistance

0.8

Notes: 1) At rated pulse conditions

2) Mode S Burst: 0.5us (on/off), N=128, Per=6.4ms; LTDC=1%

Rev B: October 2009

MDS70

70 Watts, 50 Volts, Pulsed

Avionics 1030 - 1090MHz