MS1202

Microsemi reserves the right to change, without notice, the specifications and information contained herein.

DESCRIPTION:

The MS1202 is a epitaxial silicon NPN transistor designed for 12.5 volt

class C applications in the 118 – 136 MHz frequency band and 28 volt FM

ground station applications. Gold metalization and emitter ballast

resistors provide long term product ruggedness and reliability.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

Parameter

Value

Unit

Collector - Base Voltage

65

V

Collector - Emitter Voltage

35

V

Emitter - Base Voltage

4.0

V

Device Dissipation

15

W

Junction Temperature

200

°C

Device Current

1.0

A

Storage Temperature

-65 to +200

Thermal Data

Thermal Resistance Junction-case

11.7

°C/W

Rev A January 2009

Features

• 175 MHz

• 12.5 VOLTS

• P

• G

• COMMON EMITTER CONFIGURATION

RF & MICROWAVE TRANSISTORS

FM MOBILE APPLICATIONS