MS1642P datasheet(1/3 Pages) MICROSEMI

Part #	MS1642P

Description	RF & MICROWAVE TRANSISTORS VHF, UHF GENERAL PURPOSE

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Manufacturer	MICROSEMI [Microsemi Corporation]

Direct Link	http://www.microsemi.com

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MS1642P

Microsemi reserves the right to change, without notice, the specifications and information contained herein.

Visit our web site at www.microsemi.com or contact our factory direct.

DESCRIPTION:

The MS1642 is a gold metallized silicon NPN transistor

designed for general purpose amplifier applications in

the VHF and UHF frequency bands. Diffused emitter

ballast resistors and computer controlled wirebonding

techniques ensure maximum device reliability and

consistency.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

Parameter

Value

Unit

PDISS

Power Dissipation*

27

W

IC(max)

Device Current*

1.5

A

TSTG

Storage Temperature

-65 to +150

ºC

VCBO

Collector – Base Voltage

60

V

VCEO

Collector - Emitter Voltage

33

V

VEBO

Emitter - Base Voltage

4.0

V

Thermal Data

RTH(J-C)

Thermal Resistance Junction-case

6.4

°C/W

*Applies only to rated RF amplifier operation

Features

• 400 MHz

• GOLD METALLIZATION

• P

OUT = 10 W MINIMUM

• G

P = 12 dB MINIMUM

• INFINITE VSWR CAPABILITY

• COMMON EMITTER CONFIGURATION

RF & MICROWAVE TRANSISTORS

VHF, UHF GENERAL PURPOSE

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