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NX2601 Datasheet(PDF) 21 Page - Microsemi Corporation |
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NX2601 Datasheet(HTML) 21 Page - Microsemi Corporation |
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21 / 25 page ![]() NX2601 21 Rev. 2.3 12/01/06 For electrolytic or POSCAP, R C is typically selected to be zero. R f2 is determined by the desired output voltage f 2 f 1 REF LDOOUT REF R R V /(V V) 5k 0.8V /(2.5V 0.8) 2.35k = ×− = Ω× − =Ω Choose R f2=2.34kΩ. Current Limit for LDO Current limit of LDO is achieved by sensing the LDO feedback voltage. When LDO_FB pin is below 0.4V, the IC goes into hiccup mode. The IC will turn off all the channel (Channel 1 and Channel 2 ) for 2096 cycles and start to restart system again. Layout Considerations The layout is very important when designing high frequency switching converters. Layout will affect noise pickup and can cause a good design to perform with less than expected results. There are two sets of components considered in the layout which are power components and small sig- nal components. Power components usually consist of input capacitors, high-side MOSFET, low-side MOSFET, inductor and output capacitors. A noisy environment is generated by the power components due to the switch- ing power. Small signal components are connected to sensitive pins or nodes. A multilayer layout which in- cludes power plane, ground plane and signal plane is recommended . Layout guidelines: 1. First put all the power components in the top layer connected by wide, copper filled areas. The input capacitor, inductor, output capacitor and the MOSFETs should be close to each other as possible. This helps to reduce the EMI radiated by the power loop due to the high switching currents through them. 2. Low ESR capacitor which can handle input RMS ripple current and a high frequency decoupling ceramic cap which usually is 1uF need to be practically touch- ing the drain pin of the upper MOSFET, a plane connec- tion is a must. 3. The output capacitors should be placed as close as to the load as possible and plane connection is re- quired. 4. Drain of the low-side MOSFET and source of the high-side MOSFET need to be connected thru a plane ans as close as possible. A snubber nedds to be placed as close to this junction as possible. 5. Source of the lower MOSFET needs to be con- nected to the GND plane with multiple vias. One is not enough. This is very important. The same applies to the output capacitors and input capacitors. 6. Hdrv and Ldrv pins should be as close to MOSFET gate as possible. The gate traces should be wide and short. A place for gate drv resistors is needed to fine tune noise if needed. 7. Vcc capacitor, BST capacitor or any other by- passing capacitor needs to be placed first around the IC and as close as possible. The capacitor on comp to GND or comp back to FB needs to be place as close to the pin as well as resistor divider. 8. The output sense line which is sensing output back to the resistor divider should not go through high frequency signals. 9. All GNDs need to go directly thru via to GND plane. 10. The feedback part of the system should be kept away from the inductor and other noise sources, and be placed close to the IC. 11. In multilayer PCB, separate power ground and analog ground. These two grounds must be connected together on the PC board layout at a single point. The goal is to localize the high current path to a separate loop that does not interfere with the more sensitive ana- log control function. |
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