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2SD596 Datasheet(PDF) 1 Page - Rectron Semiconductor |
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2SD596 Datasheet(HTML) 1 Page - Rectron Semiconductor |
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1 / 2 page ![]() RECTRON SEMICONDUCTOR FEATURES MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weight: 0.008 gram SOT-23 2SD596 Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 OC ambient temperature unless otherwise specified. 0.118(3.00) 0.012(0.30) 0.020(0.50) 0.003(0.08) 0.006(0.15) 0.110(2.80) 0.019(2.00) 0.071(1.80) 0.100(2.55) 0.089(2.25) 0.020(0.50) 0.012(0.30) 0.043(1.10) 0.035(0.90) 0.004(0.10) 0.000(0.00) TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) 2006-3 ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) Emitter cut-off current (VEB= 5V, IC=0) DC current gain (VCE= 1V, IC= 100mA) DC current gain (VCE= 1V, IC= 700mA) Collector cut-off current (VCB= 30V, IE=0) Collector-emitter saturation voltage (IC= 700mA, IB= 70mA) Base-emitter voltage (VCE= 6V, IC= 10mA) Transition frequency (VCE= 6V, IC= 10mA) CHARACTERISTICS SYMBOL UNITS - - - - - - - - - - - - 0.1 - - - 400 m A m A V V V V V MHz Collector-base breakdown voltage (IC= 100mA, IE=0) Collector-emitter breakdown voltage (IC= 1mA, IB=0) Emitter-base breakdown voltage (IE= 100mA, IC=0) CLASSIFICATION OF hFE Pulse teat: Pulse width <350ms, Duty Cycle <2%. RANK Range DV1 110-180 135-220 V(BR)CBO V(BR)CEO V(BR)EBO IEBO hFE(1) hFE(2) ICBO VBE(on) VCE(sat) fT TYP MAX 30 25 5 - 50 0.7 - 140 - 0.6 110 MIN DV5 DV2 200-320 DV4 170-270 DV3 250-400 0.055(1.40) 0.047(1.20) - 0.1 0.6 - BASE EMITTER COLLECTOR * * * * Power dissipation PCM : 0.2 W (Tamb=25OC) Collector current ICM : 0.7 A Collector-base voltage V(BR)CBO : 30 V Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC 1 1 2 3 2 3 * * * * * Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. |
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