HFS3N80 datasheet(3/8 Pages) SEMIHOW

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◎ SEMIHOW REV.A0,Dec 2005

-1

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1500

iss = Cgs + Cgd (Cds = shorted)

oss = Cds + Cgd

rss = Cgd

※ Notes :

1. V

GS = 0 V

2. f = 1 MHz

rss

oss

iss

DS, Drain-Source Voltage [V]

Typical Characteristics

0.2

0.4

0.6

0.8

1.0

1.2

1.4

-1

150 ℃

※ Notes :

1. V

GS = 0V

2. 250μ s Pulse Test

25℃

SD, Source-Drain voltage [V]

DS = 400V

DS = 160V

DS = 640V

※ Note : I

D = 3.0A

G, Total Gate Charge [nC]

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

DS, Drain-Source Voltage [V]

GS, Gate-Source Voltage [V]

D, Drain Current [A]

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