HFS8N60S datasheet(3/7 Pages) SEMIHOW

Part #	HFS8N60S

Description	600V N-Channel MOSFET

PDF	7 Pages

Scroll/Zoom	100%

Manufacturer	SEMIHOW [SemiHow Co.,Ltd.]

Direct Link	http://www.semihow.com

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3 / 7 page

◎ SEMIHOW REV.A0,Dec 2006

GS, Gate-Source Voltage [V]

DS, Drain-Source Voltage [V]

Typical Characteristics

0.2

0.4

0.6

0.8

1.0

1.2

-1

150

∗ Note :

1. V

GS = 0V

2. 250

µs Pulse Test

SD, Source-Drain voltage [V]

G, Total Gate Charge [nC]

DS = 120V

DS = 300V

DS = 480V

* Note : I

D=7.5A

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

DS, Drain-Source Voltage [V]

0.5

1.0

1.5

2.0

2.5

3.0

3.5

GS = 20V

GS = 10V

∗ Note : T

J = 25

D, Drain Current [A]

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