◎ SEMIHOW REV.A1,Dec 2008

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

V

GS

Gate Threshold Voltage

V

2.0

--

4.0

V

R

DS(ON)

Static Drain-Source

On-Resistance

V

--

0.0105 0.012

Ω

On Characteristics

BV

DSS

Drain-Source Breakdown Voltage

V

75

--

--

V

ΔBV

DSS

/ΔT

J

Breakdown Voltage Temperature

Coefficient

I

--

0.06

--

V/℃

I

DSS

Zero Gate Voltage Drain Current

V

--

--

1

㎂

V

--

--

10

㎂

I

GSSF

Gate-Body Leakage Current,

Forward

V

--

--

100

㎁

I

GSSR

Gate-Body Leakage Current,

Reverse

V

--

--

-100

㎁

Off Characteristics

C

iss

Input Capacitance

V

f = 1.0 MHz

--

4340

5640

㎊

C

oss

Output Capacitance

--

834

1080

㎊

C

rss

Reverse Transfer Capacitance

--

55

72

㎊

Dynamic Characteristics

t

d(on)

Turn-On Time

V

R

(Note 4,5)

--

30

60

㎱

t

r

Turn-On Rise Time

--

193

380

㎱

t

d(off)

Turn-Off Delay Time

--

130

260

㎱

t

f

Turn-Off Fall Time

--

136

270

㎱

Q

g

Total Gate Charge

V

V

(Note 4,5)

--

77

100

nC

Q

gs

Gate-Source Charge

--

22

--

nC

Q

gd

Gate-Drain Charge

--

19

--

nC

Switching Characteristics

Source-Drain Diode Maximum Ratings and Characteristics

Notes ;

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L=307.5uH, I

3. I

4. Pulse Test : Pulse Width

≤ 300μs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature

I

S

Continuous Source-Drain Diode Forward Current

--

--

80

A

I

SM

Pulsed Source-Drain Diode Forward Current

--

--

320

V

SD

Source-Drain Diode Forward Voltage

I

--

--

1.5

V

trr

Reverse Recovery Time

I

di

(Note 4)

--

68

--

㎱

Qrr

Reverse Recovery Charge

--

160

--

μC