SSM90T03GS datasheet(2/5 Pages) SSC

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SSM90T03GP,S

2/17/2005 Rev.2.3

ELECTRICAL CHARACTERISTICS

(at Tj=25°C, unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=1mA

∆BV

DSS/

∆Tj

Breakdown Voltage Temperature Coefficient

Reference to 25°C, ID=1mA

0.02

V/°C

RDS(ON)

Static Drain-Source On-Resistance

VGS=10V, ID=45A

Ω

VGS=4.5V, ID=30A

Ω

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250uA

0.8

gfs

Forward Transconductance

VDS=10V, ID=30A

IDSS

Drain-Source Leakage Current (Tj=25

oC)

VDS=30V, VGS=0V

Drain-Source Leakage Current (Tj=150

oC)

VDS=24V ,VGS=0V

IGSS

Gate-Source Leakage

VGS= ±20V

±100

Total Gate Charge

ID=40A

Qgs

Gate-Source Charge

VDS=24V

8.5

Qgd

Gate-Drain ("Miller") Charge

VGS=4.5V

td(on)

Turn-on Delay Time

VDS=15V

Rise Time

ID=30A

td(off)

Turn-off Delay Time

RG=3.3Ω , VGS=10V

Fall Time

RD=0.5Ω

120

Ciss

Input Capacitance

VGS=0V

4090

6540

Coss

Output Capacitance

VDS=25V

1010

Crss

Reverse Transfer Capacitance

f=1.0MHz

890

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

VSD

Forward On Voltage

IS=45A, VGS=0V

1.3

trr

Reverse Recovery Time

IS=30A, VGS=0V,

Qrr

Reverse Recovery Charge

dI/dt=100A/µs

Notes:

1.Pulse width limited by safe operating area.

2.Pulse width <300us , duty cycle <2%.

3.VDD=25V, L=100uH, RG=25Ω , IAS=24A.

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