SSM95T06GP datasheet(2/5 Pages) SSC

2 / 5 page

www.SiliconStandard.com

2 of 5

SSM95T06GP,S

2/16/2005 Rev.1.10

Electrical Characteristics @ Tj=25

oC (unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=1mA

∆BV

DSS/

∆Tj

Breakdown Voltage Temperature Coefficient

Reference to 25°C, ID=1mA

0.05

V/°C

RDS(ON)

Static Drain-Source On-Resistance

VGS=10V, ID=45A

8.5

Ω

VGS=4.5V, ID=20A

Ω

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250uA

gfs

Forward Transconductance

VDS=10V, ID=45A

IDSS

Drain-Source Leakage Current (Tj=25

oC)

VDS=60V, VGS=0V

Drain-Source Leakage Current (Tj=150

oC)

VDS=48V ,VGS=0V

100

IGSS

Gate-Source Leakage

VGS= ±20V

±100

Total Gate Charge

ID=45A

115

Qgs

Gate-Source Charge

VDS=48V

Qgd

Gate-Drain ("Miller") Charge

VGS=4.5V

td(on)

Turn-on Delay Time

VDS=30V

Rise Time

ID=45A

td(off)

Turn-off Delay Time

RG=3.3Ω , VGS=10V

Fall Time

RD=0.67Ω

109

Ciss

Input Capacitance

VGS=0V

5700

9200

Coss

Output Capacitance

VDS=25V

900

Crss

Reverse Transfer Capacitance

f=1.0MHz

560

Gate Resistance

f=1.0MHz

1.1

1.7

Ω

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

VSD

Forward On Voltage

IS=45A, VGS=0V

1.3

trr

Reverse Recovery Time

IS=20A, VGS=0V

Qrr

Reverse Recovery Charge

dI/dt=100A/µs

Notes:

1.Pulse width limited by safe operating area.

2.Pulse width <300us , duty cycle <2%.

3.The maximum current is limited by the package to 75A .

4.Starting Tj=25

oC , V

DD=30V , L=1mH , RG=25Ω , IAS=30A.

SSM95T06GP Datasheet(PDF) 2 Page - Silicon Standard Corp.

SSM95T06GP Datasheet(HTML) 2 Page - Silicon Standard Corp.

Html Pages

1 2 3 4 5

Datasheet Download

Link URL