www.SiliconStandard.com

1 of 5

N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

Low gate-charge

60V

Simple drive requirement

8.5m

Ω

Fast switching

75A

Description

G

D

S

G D

S

TO-263 (S)

G

D

S

TO-220(P)

The SSM95T06S is in a TO-263 package, which is widely used for

commercial and industrial surface mount applications, and is well suited

for low voltage applications such as DC/DC converters. The through-hole

version, the SSM95T06P in TO-220, is available for low-footprint vertical

mounting. These devices are manufactured with an advanced process,

providing improved on-resistance and switching performance.

Pb-free lead finish (second-level interconnect)

SSM95T06GP,S

2/16/2005 Rev.1.10

Absolute Maximum Ratings

Symbol

Units

V

V

A

W/°C

Single Pulse Avalanche Energy

4

mJ

Avalanche Current

A

Symbol

Value

Units

Rthj-c

Thermal Resistance Junction-case

Max.

0.9

°C/W

Rthj-a

Thermal Resistance Junction-ambient

Max.

62

°C/W

Parameter

Rating

Drain-Source Voltage

60

Gate-Source Voltage

±20

3

75

A

66

A

Pulsed Drain Current

1

260

Total Power Dissipation

138

W

-55 to 150

°C

Operating Junction Temperature Range

-55 to 150

°C

Linear Derating Factor

1.11

450

30

Thermal Data

Parameter

Storage Temperature Range