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SSM95T07GP Datasheet(PDF) 2 Page - Silicon Standard Corp.

Part # SSM95T07GP
Description  N-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  6 Pages
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Manufacturer  SSC [Silicon Standard Corp.]
Direct Link  http://www.siliconstandard.com
Logo SSC - Silicon Standard Corp.

SSM95T07GP Datasheet(HTML) 2 Page - Silicon Standard Corp.

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07/11/2007 Rev.1.00
www.SiliconStandard.com
2
SSM95T07GP
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
75
-
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=1mA
-
0.01
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2 VGS=10V, ID=60A
-
-
5
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=60A
-
57
-
S
IDSS
Drain-Source Leakage Current (Tj=25oC)
VDS=75V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=150oC)
VDS=60V ,VGS=0V
-
-
250
uA
IGSS
Gate-Source Leakage
VGS= ±20V
-
-
±100
nA
Qg
Total Gate Charge2
ID=80A
-
85
135
nC
Qgs
Gate-Source Charge
VDS=40V
-
25
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
36
-
nC
td(on)
Turn-on Delay Time2
VDS=40V
-
22
-
ns
tr
Rise Time
ID=80A
-
160
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
38
-
ns
tf
Fall Time
RD=0.5Ω
-
165
-
ns
Ciss
Input Capacitance
VGS=0V
-
4290 6870
pF
Coss
Output Capacitance
VDS=25V
-
985
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
390
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.2
1.8
Ω
SOURCE-DRAIN DIODE
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
Forward On Voltage2
IS=60A, VGS=0V
-
-
1.3
V
trr
Reverse Recovery Time2
IS=40A, VGS=0V
-
75
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
190
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 80A, calculated continuous current
based on maximum allowable junction temperature is 169A.
4.Starting Tj=25oC , L=1mH , IAS=30A.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
ELECTRICAL CHARACTERISTICS
(TJ=25
o
C unless otherwise specified)



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