SSM9477M datasheet(4/5 Pages) SSC

Part #	SSM9477M

Description	N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	SSC [Silicon Standard Corp.]

Direct Link	http://www.siliconstandard.com

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SSM9477M/GM

8/21/2004 Rev.2.01

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

Fig 11. Switching Time Waveform

Fig 12. Gate Charge Waveform

td(on) tr

td(off)tf

VDS

VGS

10%

90%

4.5V

QGS

QGD

Charge

Q G , Total Gate Charge (nC)

I D = 4 A

V DS = 30 V

V DS = 38 V

V DS = 48 V

100

1000

V DS , Drain-to-Source Voltage (V)

f=1.0MHz

C iss

C oss

C rss

0.001

0.01

0.1

0.0001

0.001

0.01

0.1

100

1000

t , Pulse Width (s)

PDM

Duty factor = t/T

Peak Tj = PDM x Rthja + Ta

Rthja = 125°C/W

0.02

0.01

0.05

0.1

0.2

Duty factor=0.5

Single Pulse

0.01

0.1

100

0.1

100

1000

V DS , Drain-to-Source Voltage (V)

T A =25

o C

Single Pulse

100us

1ms

10ms

100ms

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