SSM9620M datasheet(2/6 Pages) SSC

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SSM9620M

Electrical Characteristics @ Tj=25

oC (unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ. Max. Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=-250uA

-20

∆BV

DSS/∆ T j

Breakdown Voltage Temperature Coefficient

Reference to 25°C, ID=-1mA

-0.037

V/°C

RDS(ON)

Static Drain-Source On-Resistance

VGS=-4.5V, ID=-9.5A

Ω

VGS=-2.5V, ID=-6.0A

Ω

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=-250uA

-1

gfs

Forward Transconductance

VDS=-10V, ID=-9.5A

IDSS

Drain-Source Leakage Current (Tj=25

oC)

VDS=-20V, VGS=0V

-1

Drain-Source Leakage Current (Tj=70

oC)

VDS=-16V, VGS=0V

-25

IGSS

Gate-Source Leakage

VGS=-

Total Gate Charge

ID=-9.5A

Qgs

Gate-Source Charge

VDS=-10V

Qgd

Gate-Drain ("Miller") Charge

VGS=-5V

3.5

td(on)

Turn-on Delay Time

VDS=-10V

Rise Time

ID=-9.5A

500

td(off)

Turn-off Delay Time

RG=6Ω ,VGS=-4.5V

Fall Time

RD=1.05Ω

300

Ciss

Input Capacitance

VGS=0V

2158

Coss

Output Capacitance

VDS=-15V

845

Crss

Reverse Transfer Capacitance

f=1.0MHz

230

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ. Max. Units

Continuous Source Current ( Body Diode )

VD=VG=0V , VS=-1.2V

-2.5

ISM

Pulsed Source Current ( Body Diode )

-76

VSD

Forward On Voltage

Tj=25°C, IS=-2.5A, VGS=0V

-1.2

Notes:

1.Pulse width limited by Max. junction temperature.

2.Pulse width <300us , duty cycle <2%.

3.Surface mounted on FR4 board, t<10 sec.

± 12V

±100

Rev.2.02 3/06/2004

SSM9620M Datasheet(PDF) 2 Page - Silicon Standard Corp.

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