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SSM9915H Datasheet(PDF) 1 Page - Silicon Standard Corp. |
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SSM9915H Datasheet(HTML) 1 Page - Silicon Standard Corp. |
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1 / 6 page ![]() www.SiliconStandard.com 1 of 6 SSM9915H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance BV DSS 20V Capable of 2.5V gate drive R DS(ON) 50mΩ Low drive current I D 20A Simple drive requirement Description Absolute Maximum Ratings Symbol Units VDS V VGS V ID@TC=25℃ A ID@TC=125℃ A IDM A PD@TC=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-c Thermal Resistance Junction-case Max. 4.8 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃/W Parameter Rating Drain-Source Voltage 20 Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V 20 Continuous Drain Current, VGS @ 4.5V 16 Pulsed Drain Current 1 41 Total Power Dissipation 26 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.2 Thermal Data Parameter Storage Temperature Range Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. ± 10 G D S TO-252(H) G D S TO-251(J) G D S Rev.2.01 6/26/2003 |
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