HAL1000 datasheet(21/28 Pages) MICRONAS

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DATA SHEET

HAL1000

Micronas

March 4, 2004; 6251-528-1DS

4. Application Notes

4.1. Application Circuit

For EMC protection, it is recommended to connect one

ceramic 4.7 nF capacitor between ground and the sup-

ply voltage, and between ground and the output pin. In

addition, the input of the controller unit should be

pulled-down with a resistor of 10 k

Ω or more and a

ceramic 4.7 nF capacitor.

WARNING:

PLEASE NOTE THAT DURING PROGRAM-

MING, THE SENSOR WILL BE SUPPLIED

REPEATEDLY WITH THE PROGRAMMING

VOLTAGE OF 12.5 V FOR 100 MS. ALL

COMPONENTS CONNECTED TO THE VDD

LINE AT THIS TIME MUST BE ABLE TO

RESIST THIS VOLTAGE.

Fig. 4–1: Recommended application circuit

4.2. Temperature Compensation

The relationship between the temperature coefficient

of the magnet and the corresponding TC and TCSQ

codes for linear compensation is given in the following

table. In addition to the linear change of the magnetic

field with temperature, the curvature can be adjusted

as well. For this purpose, other TC and TCSQ combi-

nations are required which are not shown in the table.

Please contact Micronas for more detailed information

on this higher order temperature compensation.

The HAL8xx and HAL1000 contain the same tempera-

ture compensation circuits. If an optimal setting for the

HAL8xx is already available, the same settings may be

used for the HAL1000.

OUT

VDD

GND

4.7 nF

HAL1000

≥10 kΩ

µC

4.7 nF

Temperature

Coefficient of

Magnet (ppm/K)

TCSQ

400

300

200

100

018

−50

−90

−130

−170

−200

−240

−280

−320

−360

−410

−450

−500

−550

−600

−650

−700

−750

−810

−860

−116

−910

−216

−960

−316

−1020

−417

−1070

−517

−1120

−617

−1180

−718

−1250

−818

−1320

−919

−1380

−10

−1430

−11

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