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BCM856DS/DG Datasheet(PDF) 7 Page - NXP Semiconductors |
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BCM856DS/DG Datasheet(HTML) 7 Page - NXP Semiconductors |
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7 / 14 page  BCM856BS_BCM856DS_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 7 August 2008 7 of 14 NXP Semiconductors BCM856BS; BCM856DS PNP/PNP matched double transistors VCE = −5 V; Tamb =25 °CVCE = −5 V; Tamb =25 °C Fig 5. Base-emitter voltage as a function of collector current; typical values Fig 6. Transition frequency as a function of collector current; typical values f = 1 MHz; Tamb =25 °C f = 1 MHz; Tamb =25 °C Fig 7. Collector capacitance as a function of collector-base voltage; typical values Fig 8. Emitter capacitance as a function of emitter-base voltage; typical values 006aaa544 −0.6 −0.8 −1 VBE (V) −0.4 IC (mA) −10−1 −103 −102 −1 −10 IC (mA) −1 −102 −10 006aaa545 102 103 fT (MHz) 10 VCB (V) 0 −10 −8 −4 −6 −2 006aaa546 4 2 6 8 Cc (pF) 0 006aaa547 VEB (V) 0 −6 −4 −2 9 11 7 13 15 Ce (pF) 5 |
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