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PSMN2R6-40YS Datasheet(PDF) 7 Page - NXP Semiconductors |
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PSMN2R6-40YS Datasheet(HTML) 7 Page - NXP Semiconductors |
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7 / 13 page ![]() PSMN2R6-40YS_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 23 June 2009 7 of 13 NXP Semiconductors PSMN2R6-40YS N-channel LFPAK 40 V 2.8 m Ω standard level MOSFET Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig 8. Drain-source on-state resistance as a function of gate-source voltage; typical values Fig 9. Forward transconductance as a function of drain current; typical values Fig 10. Sub-threshold drain current as a function of gate-source voltage 003aad192 0 20 40 60 80 100 02 46 VGS (V) ID (A) Tj = 150 °C Tj = 25 °C Tj = 175 °C 003aad198 0 3 6 9 12 0 5 10 15 20 VGS (V) RDSon (m Ω) 003aad197 0 20 40 60 80 100 0 2040 6080 100 ID (A) gfs (S) 03aa35 VGS (V) 06 4 2 10−4 10−5 10−2 10−3 10−1 ID (A) 10−6 min typ max |
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