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IXFN520N075T2 Datasheet(PDF) 1 Page - IXYS Corporation |
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IXFN520N075T2 Datasheet(HTML) 1 Page - IXYS Corporation |
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1 / 6 page  © 2009 IXYS CORPORATION, All Rights Reserved Symbol Test Conditions Maximum Ratings V DSS T J = 25 °C to 175°C 75 V V DGR T J = 25 °C to 175°C, R GS = 1MΩ 75 V V GSS Continuous ±20 V V GSM Transient ±30 V I D25 T C = 25°C (Chip Capability) 480 A I L(RMS) External Lead Current Limit 200 A I DM T C = 25°C, Pulse Width Limited by TJM 1500 A I A T C = 25°C 200 A E AS T C = 25°C3 J P D T C = 25°C 940 W T J -55 ... +175 °C T JM 175 °C T stg -55 ... +175 °C T L 1.6mm (0.062 in.) from Case for 10s 300 °C T SOLD Plastic Body for 10s 260 °C V ISOL 50/60 Hz, RMS t = 1 minute 2500 V~ I ISOL ≤ 1mA t = 1 second 3000 V~ M d Mounting Torque 1.5/13 Nm/lb.in. Terminal Connection Torque 1.3/11.5 Nm/lb.in. Weight 30 g Symbol Test Conditions Characteristic Values (T J = 25°C, Unless Otherwise Specified) Min. Typ. Max. BV DSS V GS = 0V, ID = 3mA 75 V V GS(th) V DS = VGS, ID = 8mA 2.5 5.0 V I GSS V GS = ±20V, VDS = 0V ±200 nA I DSS V DS = VDSS, VGS = 0V 25 μA T J = 150°C 2 mA R DS(on) V GS = 10V, ID = 100A, Note 1 1.5 1.9 m Ω TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN520N075T2 DS100193A(11/09) V DSS = 75V I D25 = 480A R DS(on) ≤ ≤≤≤≤ 1.9m Ω Ω Ω Ω Ω Features International Standard Package miniBLOC, with Aluminium Nitride Isolation 175°C Operating Temperature Isolation Voltage 2500 V~ High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low R DS(on) Advantages Easy to Mount Space Savings High Power Density Applications DC-DC Converters and Off-Line UPS Primary-Side Switch High Speed Power Switching Applications Either Source Terminal S can be used as the Source Terminal or the Kelvin Source ( Gate Return ) Terminal. miniBLOC, SOT-227 E153432 G D S S G = Gate D = Drain S = Source Preliminary Technical Information |
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