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STPSC806 Datasheet(PDF) 1 Page - STMicroelectronics |
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STPSC806 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 7 page  September 2009 Doc ID 16286 Rev 1 1/7 7 STPSC806 600 V power Schottky silicon carbide diode Features ■ No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. ST SiC diodes will boost the performance of PFC operations in hard switching conditions. Table 1. Device summary IF(AV) 8 A VRRM 600 V Tj (max) 175 °C QC (typ) 10 nC K A TO-220AC STPSC806D www.st.com |
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