PBLS4002D datasheet(6/15 Pages) NXP

6 / 15 page

PBLS4002D_3

Product data sheet

Rev. 03 — 5 January 2009

6 of 15

NXP Semiconductors

PBLS4002D

40 V PNP BISS loadswitch

Characteristics

Ceramic PCB, Al2O3, standard footprint

Fig 4.

TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration; typical

values

006aaa464

102

103

Zth(j-a)

(K/W)

10−5

10−2

10−4

102

10−1

tp (s)

10−3

103

0.75

0.5

0.33

0.2

0.1

δ = 1

0.05

0.02

0.01

Table 7.

Characteristics

Tamb =25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

TR1; PNP low VCEsat transistor

ICBO

collector-base cut-off

current

VCB = −40 V; IE =0A

−0.1

µA

VCB = −40 V; IE =0A;

Tj = 150 °C

−50

µA

ICES

collector-emitter

cut-off current

VCE = −30 V; VBE =0V

−0.1

µA

IEBO

emitter-base cut-off

current

VEB = −5 V; IC =0A

−0.1

µA

hFE

DC current gain

VCE = −5 V; IC = −1 mA

300

VCE = −5 V; IC = −100 mA

[1] 300

800

VCE = −5 V; IC = −500 mA

[1] 215

VCE = −5 V; IC = −1A

[1] 150

VCEsat

collector-emitter

saturation voltage

IC = −100 mA; IB = −1mA

−80

−140

IC = −500 mA; IB = −50 mA

[1] -

−120

−170

IC = −1 A; IB = −100 mA

[1] -

−220

−310

RCEsat

collector-emitter

saturation resistance

IC = −500 mA; IB = −50 mA

[1] -

240

340

Ω

VBEsat

base-emitter

saturation voltage

IC = −1 A; IB = −50 mA

[1] --

−1.1

VBEon

base-emitter

turn-on voltage

VCE = −5 V; IC = −1A

[1] --

−1V

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