PBLS6002D datasheet(7/16 Pages) NXP

7 / 16 page

PBLS6002D_2

Product data sheet

Rev. 02 — 7 September 2009

7 of 16

NXP Semiconductors

PBLS6002D

60 V PNP BISS loadswitch

[1]

Pulse test: tp ≤ 300 µs; δ≤ 0.02

VBEon

base-emitter turn-on

voltage

VCE = −5 V; IC = −1A

[1] -

−0.82 −0.9

delay time

IC = −0.5 A;

IBon = −25 mA;

IBoff =25mA

-11

rise time

ton

turn-on time

storage time

205

fall time

toff

turn-off time

260

transition frequency

IC = −50 mA;

VCE =−10 V;

f = 100 MHz

150

185

MHz

collector capacitance

VCB = −10 V;

IE =ie = 0 A; f = 1 MHz

TR2; NPN resistor-equipped transistor

ICBO

collector-base cut-off

current

VCB =50V; IE = 0 A

100

ICEO

collector-emitter cut-off

current

VCE =30V; IB = 0 A

--1

µA

VCE =30V; IB =0A;

Tj = 150 °C

--50

µA

IEBO

emitter-base cut-off current VEB =5V; IC = 0 A

900

µA

hFE

DC current gain

VCE =5V; IC =20mA

VCEsat

collector-emitter saturation

voltage

IC = 10 mA;

IB = 0.5 mA

150

VI(off)

off-state input voltage

VCE =5V; IC = 100 µA

1.1

0.5

VI(on)

on-state input voltage

VCE = 0.3 V;

IC =20mA

2.5

1.9

bias resistor 1 (input)

3.3

4.7

6.1

Ω

R2/R1

bias resistor ratio

0.8

1.2

collector capacitance

VCB =10V;

IE =ie = 0 A; f = 1 MHz

2.5

Table 7.

Characteristics …continued

Tamb = 25 °C unless otherwise speciﬁed

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

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