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MC9S08LL36 Datasheet(PDF) 39 Page - Freescale Semiconductor, Inc

Part # MC9S08LL36
Description  Technical Data
PDF  44 Pages
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Manufacturer  FREESCALE [Freescale Semiconductor, Inc]
Direct Link  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

MC9S08LL36 Datasheet(HTML) 39 Page - Freescale Semiconductor, Inc

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LCD Specifications
MC9S08LL64 Series MCU Data Sheet, Rev. 4
Freescale Semiconductor
39
3.14
LCD Specifications
3.15
Flash Specifications
This section provides details about program/erase times and program-erase endurance for the Flash
memory.
Program and erase operations do not require any special power sources other than the normal VDD supply.
For more detailed information about program/erase operations, see the Memory section.
Table 20. LCD Electricals, 3-V Glass
No.
C
Characteristic
Symbol
Min
Typ
Max
Unit
1
D
LCD supply voltage
VLCD
.9
1.5
1.8
V
2
D
LCD frame frequency
fFrame
28
30
58
Hz
3
D
LCD charge pump capacitance
CLCD
—100
100
nF
4
D
LCD bypass capacitance
CBYLCD
—100
100
nF
5
D
LCD glass capacitance
Cglass
—
2000
8000
pF
6
DVIREG
HRefSel = 0
VIREG
.89
1.00
1.15
V
7
HRefSel = 1
1.49
1.67
1.851
1 V
IREG Max can not exceed VDD –.15 V
8D
VIREG trim resolution
Δ
RTRIM
1.5
—
—
% VIREG
9
DVIREG ripple
HRefSel = 0
—
—
—
.1
V
10
HRefSel = 1
—
—
—
.15
11
D
VLCD buffered adder
2
2 VSUPPLY = 10, BYPASS = 0
IBuff
—1
μA
Table 21. Flash Characteristics
No.
C
Characteristic
Symbol
Min
Typical
Max
Unit
1D
Supply voltage for program/erase
–40
°C to 85 °C
Vprog/erase
1.8
—
3.6
V
2
D
Supply voltage for read operation
VRead
1.8
—
3.6
V
3
D
Internal FCLK frequency1
fFCLK
150
—
200
kHz
4
D
Internal FCLK period (1/FCLK)
tFcyc
5
—
6.67
μs
5
P
Byte program time (random location)2
tprog
9tFcyc
6
P
Byte program time (burst mode)2
tBurst
4tFcyc
7
P
Page erase time2
tPage
4000
tFcyc
8
P
Mass erase time2
tMass
20,000
tFcyc
9
D
Byte program current3
RIDDBP
—4—
mA



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