2002 Oct 28

3

NXP Semiconductors

Product data sheet

PNP transistor/Schottky diode module

PMEM4010PD

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1.

THERMAL CHARACTERISTICS

Note

1.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

NPN transistor

collector-base voltage

open emitter

−

−40

V

collector-emitter voltage

open base

−

−40

V

emitter-base voltage

open collector

−

−5

V

collector current (DC)

−

−1

A

peak collector current

−

−2

A

peak base current

−

−1

A

junction temperature

−

150

°C

Schottky barrier diode

continuous reverse voltage

−

20

V

continuous forward current

−

1

A

non repetitive peak forward current

t = 8.3 ms half sinewave;

JEDEC method

−

5

A

junction temperature

−

125

°C

Combined device

total power dissipation

−

600

mW

storage temperature

−65

+150

°C

operating ambient temperature

−65

+125

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to ambient

in free air; note 1

208

K/W